high power npn silicon transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8758 issue 1 page 1 of 3 STP5508 hermetic metal to3 package. high current screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage 140v v ceo collector ? emitter voltage 120v v eb emitter ? base voltage 6v i c continuous collector current 50a i cm peak collector current 100a i b base current 20a p d total power dissipation at t c = 25c 250w derate above 25c 1.43w/ c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 0.7 c/w
high power npn silicon transistor STP5508 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8758 issue 1 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma 120 v i ceo collector cut-off current v ce = 60v i b = 0 50 v ce = 140v v be(off) = 1.5v 10 m a i cex collector cut-off current t c = 150 c 1.0 ma i ebo emitter cut-off current v eb = 6v i c = 0 100 m a i c = 20a i b = 2.0a 1.0 v ce(sat) (1) collector-emitter saturation voltage i c = 50a i b = 10a 3 i c = 20a i b = 2.0a 1.8 v be(sat) (1) base-emitter saturation voltage i c = 50a i b = 10a 3.5 v be(on) (1) base-emitter on voltage i c = 20a v ce = 4v 1.8 v i c = 1.0a v ce = 4v 50 i c = 20a v ce = 4v 50 120 h fe (1) forward-current transfer ratio i c = 50a v ce = 4v 10 - dynamic characteristics ? h fe ? magnitude of common emitter small-signal short- circuit forward current transfer ratio i c = 1.0a f = 10mhz v ce = 10v 1 - v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 600 pf t r rise time 0.35 t s storage time 1.1 m s t f fall time v cc = 80v i c = 20a i b1 = i b2 = 2a 0.25 notes notes notes notes (1) pulse width 300us, 2%
high power npn silicon transistor STP5508 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8758 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) to3 (to - 204ae) pin 1 - base pin 2 - emitter case - collector 3 9 . 9 5 ( 1 . 5 7 3 ) m a x . 1 7 . 1 5 ( 0 . 6 7 5 ) 1 6 . 6 4 ( 0 . 6 5 5 ) 3 0 . 4 0 ( 1 . 1 9 7 ) 3 0 . 1 5 ( 1 . 1 8 7 ) 2 6 . 6 7 ( 1 . 0 5 0 ) m a x . 1 1 . 1 8 ( 0 . 4 4 0 ) 1 0 . 6 7 ( 0 . 4 2 0 ) 1 2 4 . 0 9 ( 0 . 1 6 1 ) 3 . 8 4 ( 0 . 1 5 1 ) d i a . 2 p l c s . 2 0 . 3 2 ( 0 . 8 0 0 ) 1 8 . 8 0 ( 0 . 7 4 0 ) d i a . 7 . 8 7 ( 0 . 3 1 0 ) 6 . 9 9 ( 0 . 2 7 5 ) 1 2 . 0 7 ( 0 . 4 7 5 ) 1 1 . 3 0 ( 0 . 4 4 5 ) 1 . 7 8 ( 0 . 0 7 0 ) 1 . 5 2 ( 0 . 0 6 0 ) 1 . 5 7 ( 0 . 0 6 2 ) 1 . 4 7 ( 0 . 0 5 8 ) d i a . 2 p l c s .
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